74ABT00N,112

Overview

The NXP USA Inc. 74ABT00N,112 is a quad 2-input NAND gate manufactured using BiCMOS technology. It operates within a supply voltage range of 4.5 V to 5.5 V and supports direct interfacing with TTL levels. The device includes IOFF circuitry for partial power-down applications, disabling outputs to prevent backflow current when powered down. Latch-up protection exceeds 500 mA per JESD78B Class II Level A standards. ESD protection capabilities include HBM exceeding 2000 V and CDM exceeding 1000 V. Recommended operating conditions specify an ambient temperature range from -40 °C to +85 °C.

Feature Summary

• BiCMOS high-speed logic implementation
• IOFF circuitry for partial power-down mode operation
• Direct interface compatibility with TTL levels

Applications

• Partial power-down system designs
• High-speed digital logic processing
• TTL level interfacing circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and REACH registration details directly from the manufacturer's latest product data sheet before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high-speed NAND logic with TTL compatibility. Ensure the design accommodates the specified 4.5 V to 5.5 V supply voltage range. Verify that the required ESD protection levels meet the project's safety requirements regarding HBM and CDM standards.

Part Context

This component belongs to the 74ABT series of high-speed BiCMOS logic devices. The series is characterized by fast switching speeds and robust output drive capabilities. The 74ABT00 specifically provides four independent 2-input NAND gates in a single integrated circuit package.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pinouts and electrical characteristics carefully to ensure functional equivalence.