A2T21H140-24SR3

RF FETs, MOSFETs Overview

The A2T21H140-24SR3 is a 36 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. It operates at a drain voltage of 28 Vdc with a maximum rating of 65 Vdc. The device features an NI-780S-4L2L package and includes internal matching on both input and output sides. Typical single-carrier W-CDMA performance at 2100 MHz yields 36 W average output power with 53.1% drain efficiency and -30.2 dBc adjacent channel power ratio.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty configuration
• Greater negative gate-source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station applications
• Asymmetrical Doherty amplifier designs
• Digital predistortion error correction systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP channels due to potential counterfeit risks. Confirm RoHS compliance status via official documentation. Ensure proper thermal management during installation as continuous use at maximum temperature affects MTTF. Validate ESD protection handling procedures per JESD22-A114 and JESD22-C101 standards before assembly.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and efficiency. Verify compatibility with existing Doherty architectures and digital predistortion algorithms. Consider thermal resistance characteristics and operating junction temperature limits when designing heat dissipation solutions. Ensure load pull impedance matching aligns with carrier and peaking side requirements.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF Power LDMOS Transistor family, specifically engineered for high-power RF amplification in wireless communication networks. The device utilizes silicon technology and is housed in an over-molded plastic package suitable for surface mount applications. It represents a specialized solution for modern base station power amplifier modules.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.