AIHD06N60RATMA1

Single IGBTs Overview

The AIHD06N60RATMA1 is a Trench Field Stop IGBT transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 12 A at 25°C. The device utilizes a PG-TO252-3 (TO-252-3) surface-mount package. Key electrical parameters include a gate charge of 48 nC and a switching frequency range of 2 kHz to 20 kHz. It operates within a temperature range of -40°C to +175°C.

Single IGBTs Feature Summary

• Incorporates Trench Field Stop technology for optimized switching performance.
• Designed for high-efficiency power conversion applications.
• Integrated anti-parallel diode functionality.

Single IGBTs Applications

• Switch-mode power supplies
• Motor drive inverters
• Uninterruptible power systems

Single IGBTs Procurement Notes

Verify the specific suffix 'ATMA1' against official Infineon documentation to confirm tape-and-reel packaging and automotive-grade qualification status. Ensure compatibility with PG-TO252-3 footprints during procurement planning.

Single IGBTs Selection Notes

Select this component for designs requiring 600V blocking capability with moderate current handling in compact SMD form factors. Evaluate thermal management requirements based on the 12A continuous current rating and TO-252-3 package thermal resistance characteristics.

Single IGBTs Part Context

This part belongs to Infineon's TRENCHSTOP™ discrete IGBT family, utilizing silicon technology. It serves as a standard switching element in medium-power electronic circuits, distinct from higher-current modules or low-voltage variants within the broader product portfolio.

Single IGBTs Replacement Considerations

Consult official cross-reference lists for direct substitutes. Verify that alternative components match the 600V rating, 12A current capacity, and TO-252-3 package dimensions before implementation.