ALD110904SAL

FET, MOSFET Arrays Overview

The ALD110904SAL is a quad N-channel enhancement mode MOSFET array manufactured by Advanced Linear Devices using EPAD® CMOS technology. It features a typical gate threshold voltage of +0.40V at 1µA drain current. The device operates within a supply range defined by absolute maximum ratings of 10.6V for both drain-source and gate-source voltages, with a power dissipation limit of 500mW. Electrical characteristics include an on-resistance of 500Ω at VGS=+4.4V and a continuous drain current of 12mA. The component is housed in a 16-pin SOIC package and supports an operating temperature range from 0°C to +70°C.

FET, MOSFET Arrays Feature Summary

• Factory-monolithic matching ensures exceptional electrical characteristic alignment between devices.
• EPAD® technology enables precise threshold voltage programming for low-voltage applications.
• Excellent thermal coefficient tracking minimizes offset voltage variations across temperature changes.

FET, MOSFET Arrays Applications

• Ultra-low power analog and digital circuits
• Precision current mirrors and nano-amp current sources
• Differential amplifier input stages
• High impedance resistor simulators

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. Ensure the procurement channel provides valid traceability for this monolithic matched pair device. Confirm that the received components match the ALD110904SAL designation regarding the 16-SOIC plastic package and specified threshold voltage parameters before integration into designs requiring precision matching.

FET, MOSFET Arrays Selection Notes

Select this component when circuit designs require matched N-channel MOSFETs with a specific +0.40V threshold voltage. The EPAD® technology offers superior tempco tracking compared to discrete transistors. Consider the 500mW power dissipation limit and 10.6V voltage ratings during system planning. This array is suitable for sub-threshold operation where low leakage currents are critical.

FET, MOSFET Arrays Part Context

This part belongs to the ALD110804/ALD110904 family of EPAD® Precision Matched Pair MOSFET Arrays. The '1109' series specifically denotes enhancement mode devices with a +0.40V threshold voltage. The 'SAL' suffix indicates the 16-pin Plastic SOIC package variant. These devices utilize ALD's proprietary Electrically Programmable Analog Device technology for high-precision matching.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must be sourced from the ALD110804/ALD110904 family to maintain EPAD® matching characteristics. Verify that any substitute maintains the +0.40V threshold voltage specification and 16-SOIC footprint. Generic MOSFET arrays lack the factory-monolithic matching required for these precision applications.

FET, MOSFET Arrays FAQ

What is the typical gate threshold voltage for the ALD110904?

The typical gate threshold voltage (VGS(th)) is +0.40V, measured at a drain current of 1µA and drain-source voltage of 0.1V.

How does the EPAD® technology benefit circuit design?

EPAD® technology allows for factory-monolithic matching of transistors, providing exceptional electrical characteristic matching and excellent thermal coefficient tracking on the same chip.

What is the maximum power dissipation rating?

The maximum power dissipation is rated at 500 mW.