APT10M19BVRG

Single FETs, MOSFETs Overview

The APT10M19BVRG is a single N-channel enhancement mode MOSFET manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a drain-source breakdown voltage (Vds) of 100 V and a continuous drain current (Id) of 75 A at case temperature. Its maximum on-resistance (Rds(on)) is 19 mΩ, with a gate threshold voltage (Vgs(th)) of 2 V. The total gate charge (Qg) is 300 nC. It supports a gate-source voltage range of ±30 V and operates within a junction temperature range of -55 °C to +150 °C. Power dissipation is rated at 370 W.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration for high-current switching applications
• Low on-resistance design for efficient power management
• Robust thermal performance suitable for high-power dissipation environments

Single FETs, MOSFETs Applications

• High-frequency power switching circuits
• DC-DC converter topologies
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'VRG' against official Microchip documentation to confirm RoHS compliance and lead time specifications. Ensure the TO-247-3 footprint matches your PCB layout requirements. Cross-reference datasheet revisions to confirm electrical parameters remain consistent with your design constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and 75 A current capacity are required in a through-hole package. Compare Rds(on) values against alternative packages if space constraints allow surface-mount options. Verify that the 300 nC gate charge aligns with your driver capabilities to ensure adequate switching speeds without excessive drive losses.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of discrete power MOSFETs from Microchip Technology. The series typically offers optimized trade-offs between conduction losses and switching speeds. The TO-247 package provides superior heat sinking capabilities compared to smaller surface-mount alternatives, making it suitable for industrial and automotive power electronics where reliability under thermal stress is critical.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 100 V, 75 A, and 19 mΩ specifications in a TO-247-3 package. Check pinout compatibility and thermal resistance values. No specific cross-references are confirmed in public data.