APT24M120B2

Single FETs, MOSFETs Overview

The APT24M120B2 is a single N-channel Power MOSFET from the T-MAX B2 series, manufactured by Microchip Technology. It utilizes silicon technology and features a TO-247-3 (T-MAX [B2]) through-hole package. The device has a drain-source voltage rating of 1200 V and a continuous drain current of 24 A at case temperature. Key electrical parameters include a maximum on-resistance of 560 mΩ at 10 V gate drive, a gate charge of 260 nC, and a power dissipation capacity of 1040 W at case temperature. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1200 V drain-source breakdown voltage for robust operation in demanding environments.
• Integrated thermal management design supporting high power dissipation up to 1040 W at case temperature.
• Low on-resistance characteristics optimized for efficient conduction in switching applications.

Single FETs, MOSFETs Applications

• Industrial motor drives
• Switch-mode power supplies
• Inverter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'B2' against official datasheets to confirm pinout and thermal pad configuration. Ensure the ordering part number matches the exact package style required for your PCB footprint. Cross-reference the manufacturer's latest revision history to confirm component compliance and material declarations before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 1200 V rating and approximately 24 A continuous current are required in a standard through-hole package. Compare the 560 mΩ on-resistance against system efficiency targets. Verify that the TO-247-3 mounting dimensions align with the mechanical constraints of the heat sink or chassis assembly.

Single FETs, MOSFETs Part Context

This device belongs to the Microchip Power MOS 8 family, specifically the T-MAX B2 series. These components are designed for high-power switching applications requiring reliable performance under high voltage stress. The T-MAX packaging provides enhanced thermal conductivity compared to standard TO-247 variants.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 1200 V, ~24 A N-channel MOSFETs in TO-247 packages from the same manufacturer, such as the APT24M120L. Verify pin compatibility and thermal resistance values before substitution.