APT30M85BVRG

Single FETs, MOSFETs Overview

The APT30M85BVRG is a single N-channel Power MOSFET manufactured by Microchip Technology, utilizing silicon technology and the Power MOS V process. It is housed in a TO-247-3 through-hole package designed for high-power applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 300 V and a continuous drain current (Id) of 40 A. The device features a maximum on-resistance (Rds On) of 85 mΩ at room temperature. Gate specifications define a threshold voltage (Vgs th) of 4 V and a total gate charge (Qg) of 130 nC. The component supports a maximum power dissipation (Pd) of 300 W and operates within a junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes Power MOS V technology for optimized performance in high-voltage switching applications.
• Features low on-resistance characteristics to minimize conduction losses in power circuits.
• Designed with robust thermal management capabilities suitable for high-power dissipation environments.

Single FETs, MOSFETs Applications

• High-frequency switching power supplies
• Motor control systems
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer's latest datasheet or product change notices. Cross-reference the part number with authorized distributor catalogs to validate current availability and lead times prior to procurement planning.

Single FETs, MOSFETs Selection Notes

Select this component when a 300 V rating and 40 A continuous current capacity are required in a TO-247 package. Consider the 85 mΩ on-resistance for efficiency calculations in moderate-frequency switching applications. Ensure the gate drive circuit can accommodate the 4 V threshold and 130 nC gate charge requirements for reliable turn-on and turn-off transitions.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of discrete power semiconductors produced by Microchip Technology. The series encompasses various voltage and current ratings tailored for industrial and consumer power electronics. The TO-247-3 package provides a standardized footprint for mounting on heatsinks, facilitating thermal management in compact power designs.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Direct replacements must match the 300 V, 40 A, and 85 mΩ specifications while maintaining the TO-247-3 form factor.