Single FETs, MOSFETs APT30N60KC6 product image

APT30N60KC6

  • Description:MOSFET N-CH 600V 30A TO220
  • Series:CoolMOS™
  • Mfr:Microsemi Corporation
  • Package:Tube

SKU:2e725a1e853c Category: Brand:

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APT30N60KC6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 600V 30A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT30N60KC6

  • Description:MOSFET N-CH 600V 30A TO220
  • Series:CoolMOS™
  • Mfr:Microsemi Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:125mOhm @ 14.5A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:2267 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):219W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220 [K]
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for APT30N60KC6

APT30N60KC6

Single FETs, MOSFETs FAQ

Is the APT30N60KC6 currently in production?

No, this component is obsolete and no longer in production.

What is the maximum collector-emitter voltage rating for this IGBT?

The device has a maximum collector-emitter breakdown voltage of 600 V.

APT30N60KC6APT30N60KC6

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