APT31M100B2

Single FETs, MOSFETs Overview

The APT31M100B2 is a single N-channel Power MOSFET manufactured by Microchip Technology, housed in a TO-247 MAX package. It features a drain-source breakdown voltage (Vds) of 1000 V and a continuous drain current (Id) of 31 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 340 mΩ. It operates within a junction temperature range of -55°C to +150°C and supports screw mounting for thermal management.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1000 V drain-source breakdown rating
• Robust current handling with 31 A continuous drain current capacity
• Low conduction losses optimized via 340 mΩ on-resistance specification
• Durable TO-247 MAX package designed for high-power thermal dissipation

Single FETs, MOSFETs Applications

• Industrial motor drives and control systems
• High-voltage power supply inverters
• Uninterruptible power supply (UPS) circuits
• Switch-mode power conversion stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'B2' against the official Microchip datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides authentic components with traceable lot codes. Confirm that the TO-247 MAX footprint matches the target PCB design requirements before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring 1000 V isolation and moderate current switching. The TO-247 MAX package facilitates efficient heat sinking compared to standard TO-247 variants. Evaluate thermal resistance parameters relative to the system's ambient conditions and heatsink capabilities to ensure reliable operation under load.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's AptPack series of discrete power MOSFETs. These devices are engineered for high-reliability applications in industrial and automotive sectors. The APT31M100B2 represents a specific configuration within the broader family of high-voltage silicon power switches offered by the manufacturer.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 1000 V, 30+ A N-channel MOSFETs in TO-247 packages from Microchip or competitors. Verify compatibility of gate charge characteristics and thermal resistance values to ensure equivalent performance in existing circuit designs without modification.