APT34M60B

Single FETs, MOSFETs Overview

The Microchip Technology APT34M60B is a single N-channel power MOSFET designed for high-voltage switching applications. It features a 600 V drain-source breakdown voltage and supports a continuous drain current of 23 A. The device utilizes Silicon technology in a TO-247-3 package, suitable for surface mount or through-hole installation. Key electrical characteristics include a maximum on-resistance of 190 mOhms and a gate threshold voltage typically around 5 V. It operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 624 W.

Single FETs, MOSFETs Feature Summary

• High-voltage capability optimized for robust switching performance
• Low on-state resistance for efficient power conduction
• Enhanced thermal stability for demanding operating environments

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Power supply inverters
• High-voltage switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes to ensure compatibility with your design requirements. Confirm that the TO-247-3 package dimensions match your PCB footprint. Check for RoHS compliance status if required by your manufacturing standards. Ensure proper handling procedures are followed due to the sensitivity of semiconductor components to electrostatic discharge during storage and assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rating and approximately 23 A continuous current capacity are required. Consider the 190 mOhm on-resistance for thermal management calculations. The TO-247-3 package offers a balance between current handling and mounting flexibility. Evaluate the gate charge specifications against your driver capabilities to ensure adequate switching speeds without excessive losses.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of power MOSFETs from Microchip Technology, formerly known as Advanced Power Technology. The series is engineered for general-purpose high-power applications requiring reliable performance under high voltage stress. The APT34M60B specifically targets designs needing robust N-channel switching with moderate current ratings.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 600 V N-channel MOSFETs in TO-247 packages with similar current and resistance ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with Microchip's official replacement guides for validated alternatives.