APT37M100L

$16.97

Description：MOSFET N-CH 1000V 37A TO264
Series：-
Mfr：Microchip Technology
Package：Tube

SKU:50855b1fa7a1 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT37M100L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 37A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT37M100L

Description：MOSFET N-CH 1000V 37A TO264
Series：-
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：330mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：305 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：9835 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1135W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-264
Package / Case：TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for APT37M100L

APT37M100L

Single FETs, MOSFETs Overview

The APT37M100L is a single N-channel power MOSFET manufactured by Microchip Technology using MOS 8 technology. It features a maximum drain-source breakdown voltage of 1000 V and a continuous drain current rating of 37 A at case temperature. The device exhibits a maximum on-state resistance of 330 milliohms. It is housed in a TO-264 package with screw mount installation. Key electrical parameters include a gate charge of 305 nC, a typical turn-on delay time of 39 ns, and a typical turn-off delay time of 130 ns. Power dissipation reaches 1135 W at case temperature, with an operating temperature range from -55 C to +150 C.

Single FETs, MOSFETs Feature Summary

Utilizes MOS 8 technology for enhanced switching performance and reliability.
Designed for high-voltage applications with a 1000 V drain-source breakdown capability.
Features low on-state resistance to minimize conduction losses.
Robust thermal management supporting high power dissipation in a TO-264 package.

Single FETs, MOSFETs Applications

High-frequency switching power supplies
Motor control systems
Industrial inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against the official Microchip datasheet to confirm package type and pinout compatibility. Ensure the sourcing channel provides authentic components with traceable documentation. Cross-reference the MOS 8 technology designation to validate performance characteristics against design requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation and moderate current handling. The TO-264 package facilitates efficient heat sinking for high-power applications. Consider the 330 milliohm on-resistance when calculating thermal management needs. Verify gate drive requirements align with the specified threshold and charge parameters.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's discrete power MOSFET portfolio, specifically utilizing MOS 8 technology. It serves as a unipolar transistor solution for power electronics. The TO-264 package distinguishes it from surface-mount alternatives, offering robust mechanical mounting for industrial environments.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible MOS 8 devices. Verify pinout and thermal characteristics before replacing with similar N-channel MOSFETs from other manufacturers.