APT4012BVR

Single FETs, MOSFETs Overview

The APT4012BVR is a high-voltage N-Channel enhancement mode power MOSFET from the Power MOS V® series, manufactured by Microsemi Corporation. It features a TO-247 package and offers a drain-source breakdown voltage of 400V with a continuous drain current of 37A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.12 ohms at VGS = 10V. It supports a pulsed drain current of 148A and operates within a junction temperature range of -55°C to 150°C. The component includes an integrated body diode with a forward voltage of 1.3V and is rated for repetitive avalanche energy.

Single FETs, MOSFETs Feature Summary

• Power MOS V® technology minimizes JFET effect and reduces on-resistance through optimized gate layout
• Achieves faster switching speeds compared to previous generations
• 100% avalanche tested for enhanced reliability in inductive load applications

Single FETs, MOSFETs Applications

• High voltage DC-DC converters
• Motor control circuits
• Inductive load switching

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Advanced Power Technology (APT) or Microsemi based on specific supply chain documentation. Confirm the package type matches the TO-247 outline dimensions provided in the datasheet. Ensure electrostatic discharge handling procedures are followed during assembly due to device sensitivity. Cross-reference the part number suffix 'VR' with official ordering guides to confirm tape-and-reel packaging specifications if applicable.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust high-voltage switching capabilities with low conduction losses. The 400V rating provides sufficient headroom for standard industrial bus voltages. Consider the thermal impedance characteristics when designing heatsinking solutions for continuous operation. The fast switching speed makes it suitable for higher frequency applications where minimizing switching losses is critical.

Single FETs, MOSFETs Part Context

This device belongs to the Power MOS V® family of high-voltage N-Channel enhancement mode power MOSFETs. This generation of technology focuses on reducing packing density effects and improving switching performance. The TO-247 package is widely used in power electronics for its ability to handle significant power dissipation and provide secure mechanical mounting.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for equivalent 400V, 37A TO-247 MOSFETs. Verify that any replacement maintains compatible gate threshold voltage and total gate charge requirements to ensure proper driver interface compatibility.