APT40SM120J

$26.59

Description：MOSFET N-CH 1200V 32A SOT227
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:0e3e8f10f796 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT40SM120J is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1200V 32A SOT227. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT40SM120J

Description：MOSFET N-CH 1200V 32A SOT227
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：3V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs：130 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：2560 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：165W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT40SM120J

APT40SM120J

Single FETs, MOSFETs Overview

The APT40SM120J is a Silicon Carbide (SiC) N-Channel Power MOSFET manufactured by Microsemi. It features a Drain-Source Voltage (VDSS) of 1200 V and a continuous drain current (ID) of 32 A at a case temperature of 25°C, decreasing to 22 A at 100°C. The device has a maximum Drain-Source On Resistance (RDS(on)) of 100 mΩ at VGS = 20V and ID = 20A. Total power dissipation is rated at 165 W at 25°C with a linear derating factor of 1.1 W/°C. The operating junction temperature range extends from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Utilizes Silicon Carbide technology for superior thermal capabilities and lower switching losses compared to silicon solutions.
Features fast switching speed due to low internal gate resistance and eliminates the need for external free-wheeling diodes.
Demonstrates stable operation at high junction temperatures up to +175°C and possesses superior avalanche ruggedness.
Includes a fast and reliable body diode with simple drive requirements that facilitate easy parallel operation.

Single FETs, MOSFETs Applications

Photovoltaic inverters, converters, and industrial motor drives
Smart grid transmission and distribution systems
Induction heating and welding equipment
Hybrid electric vehicle (HEV) powertrains and electric vehicle chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status of the datasheet, as the provided documentation is marked preliminary. Confirm the package type matches the SOT-227 ISOTOP outline and ensure mounting torque specifications are adhered to during assembly. Cross-reference the manufacturer part number against current Microsemi or Microchip Technology catalogs to confirm active status and availability of updated revisions.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient thermal management and reduced system complexity. The SiC material enables higher frequency operation and improved efficiency in power conversion stages. Consider the thermal resistance characteristics and the requirement for adequate heatsinking to maintain junction temperatures within the specified operational limits under varying load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Silicon Carbide power MOSFET product line from Microsemi. These components are designed to increase performance over traditional silicon MOSFET and IGBT solutions while lowering total cost of ownership for high-voltage applications. The series emphasizes reliability and efficiency in demanding power electronics environments.