APT41M80B2

Single FETs, MOSFETs Overview

The APT41M80B2 is an N-channel silicon MOSFET module manufactured by Microchip Technology. It features a breakdown voltage of 800 V and a continuous drain current rating of 43 A at case temperature. The device utilizes the T-MAX package, specifically TO-247 MAX, designed for through-hole mounting. Key electrical characteristics include a maximum on-state resistance of 210 mΩ at 10 V gate drive and a peak pulsed drain current capability of 150 A. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage N-channel conduction with 800 V blocking capability
• T-MAX (TO-247 MAX) leaded package for robust thermal management
• Low on-state resistance optimized for efficient power switching
• Extended operating junction temperature range up to 150°C

Single FETs, MOSFETs Applications

• Industrial motor drives and control systems
• Uninterruptible power supply (UPS) inverters
• High-frequency switch-mode power supplies
• DC-DC converter circuits requiring high isolation

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix B2 to confirm the T-MAX package variant. Ensure compatibility with TO-247 MAX footprints during PCB layout. Confirm RoHS compliance status via the official datasheet before integration. Validate thermal requirements against the specified case temperature ratings for the intended application load.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding high voltage isolation and reliable thermal performance in through-hole designs. Compare the 210 mΩ on-resistance against system efficiency targets. Consider the 43 A continuous current limit when sizing heatsinks. Verify that the 800 V rating exceeds the maximum circuit voltage spikes.

Single FETs, MOSFETs Part Context

This part belongs to the Aptex series of discrete power MOSFETs from Microchip Technology. It represents a transition to the T-MAX package family, offering improved thermal conductivity compared to standard TO-247 packages. The series is engineered for industrial power conversion environments where reliability under high stress is critical.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 800 V N-channel MOSFETs in TO-247 MAX packages from the same manufacturer. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with equivalent parts from other vendors ensuring identical voltage and current ratings.