APT48M80B2

Single FETs, MOSFETs Overview

The APT48M80B2 is an N-channel silicon MOSFET from Microchip Technology, housed in a TO-247 package with three pins and a tab. It features a drain-source voltage (Vdss) of 800 V at 25°C and a continuous drain current (Id) of 49 A at case temperature. The device has a maximum gate-source voltage (Vgs) of ±30 V and a typical on-resistance (Rds(on)) of 200 mΩ at 10 V gate drive and 24 A drain current. Power dissipation reaches 1135 W at case temperature, with an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage N-channel enhancement mode operation for robust switching applications
• Low on-resistance characteristics optimized for efficient power conduction
• High thermal performance capability supporting significant power dissipation
• Durable packaging designed for through-hole mounting and heat sinking

Single FETs, MOSFETs Applications

• Industrial motor control systems
• High-voltage power supply circuits
• Inverter and converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix B2 against official Microchip documentation to confirm pinout and electrical tolerances. Ensure the procurement channel provides genuine components with traceable lot codes. Confirm that the TO-247 package variant matches your PCB footprint requirements. Check for any recent product change notices affecting specifications or manufacturing location.

Single FETs, MOSFETs Selection Notes

Select this component when high blocking voltage and moderate current handling are required in a single-ended configuration. Compare Rds(on) values at your specific operating gate voltage to ensure efficiency targets are met. Evaluate thermal management solutions based on the 1135 W dissipation rating under ideal case conditions. Consider the 800 V rating relative to system transient voltages to prevent breakdown.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's APT series of high-power discrete MOSFETs. These devices are engineered for demanding industrial and automotive environments requiring reliable high-voltage switching. The TO-247 form factor facilitates direct mounting to heatsinks, simplifying thermal design in medium-to-high power converters.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Generic replacements may differ in gate charge or thermal resistance. Verify compatibility with existing driver circuits before implementation.