APT4F120K

Description：MOSFET N-CH 1200V 4A TO220
Series：-
Mfr：Microchip Technology
Package：Tube

SKU:e608cc4ac9fe Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT4F120K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 4A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT4F120K

Description：MOSFET N-CH 1200V 4A TO220
Series：-
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1385 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for APT4F120K

APT4F120K

Single FETs, MOSFETs Overview

The APT4F120K is a 1200V, 4A N-channel FREDFET Power MOSFET in a TO-220 package. It features a maximum drain-source on-resistance of 4.2Ω and a reverse recovery time (trr) of 195ns. The device supports a continuous drain current of 4A at 25°C case temperature and handles a pulsed current of 15A. Total power dissipation reaches 225W at 25°C. Operating junction temperature ranges from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Optimized body diode for high reliability with reduced trr and soft recovery characteristics
Ultra-low Crss capacitance for improved noise immunity and low switching loss
Poly-silicon gate structure controls di/dt for low EMI and reliable paralleling
Rated for avalanche energy applications

Single FETs, MOSFETs Applications

ZVS phase shifted full bridge converters
Half bridge circuits
PFC and boost converters
Buck converters
Forward and flyback converters

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level against the latest Microchip documentation before integration. Confirm thermal interface requirements match the specified RθJC and mounting torque values. Ensure gate drive voltage limits remain within the ±30V specification to prevent dielectric breakdown during operation.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency switching applications requiring low reverse recovery charge. The optimized body diode makes it suitable for hard-switching topologies where diode recovery stress is significant. Evaluate thermal management capabilities based on the 225W dissipation rating and required junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the Microsemi/Microchip FREDFET family, designed specifically as a fast-recovery diode equivalent integrated into a MOSFET structure. It replaces discrete diodes in synchronous rectification or bridge configurations to reduce component count and improve circuit efficiency through lower parasitic inductance.

Single FETs, MOSFETs Replacement Considerations

Check datasheet compatibility for direct pin-to-pin replacements. Verify that alternative devices meet the 1200V breakdown voltage and 4A current requirements. Ensure the replacement maintains similar trr and Crss specifications to preserve circuit stability and EMI performance.