APT5010JVRU3

Single FETs, MOSFETs Overview

The APT5010JVRU3 is a high-voltage N-channel Power MOSFET from Microchip Technology's Ultra-Fast, Low Gate Charge family. It utilizes the SOT-227 isolated base package for screw mounting. The device features a drain-source breakdown voltage of 500 V and a maximum continuous drain current of 46 A at case temperature. Its on-state resistance is specified at 100 mΩ. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Ultra-fast switching capability with industry-low gate charge
• Proprietary self-aligned aluminum metal gate structure
• Internal series gate resistance for uniform signal propagation
• Isolated base design in SOT-227 package

Single FETs, MOSFETs Applications

• High-frequency pulsed DC power supplies
• Class D audio amplifiers operating up to 2 MHz
• AM transmitters
• Plasma deposition and etching equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix U3 against official Microchip documentation to confirm exact pinout or thermal characteristics. Confirm RoHS compliance status through the manufacturer datasheet. Ensure the selected package variant matches the required isolation and mounting specifications for the target application.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring fast switching speeds and low drive power consumption. The internal series gate resistance aids in managing signal propagation delays. Evaluate the thermal management requirements for the SOT-227 package to ensure operation remains within the specified junction temperature limits during high-current pulses.

Single FETs, MOSFETs Part Context

This part belongs to the Ultra-Fast, Low Gate Charge MOSFET family, designed for applications between 250 kHz and 2 MHz. These devices are engineered for high-frequency performance using advanced silicon processes. The family targets systems where minimizing switching losses and reducing electromagnetic interference are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip cross-reference lists for verified substitutes. Verify that any alternative maintains identical voltage ratings, current capabilities, and package dimensions.