APT50M85JVFR

Single FETs, MOSFETs Overview

The APT50M85JVR is a single N-channel Power MOS V® MOSFET module manufactured by Microchip Technology. It utilizes silicon technology and features an SOT-227-4 package designed for screw mount installation. The device supports a continuous drain current of 50 A with a maximum on-resistance of 85 mΩ at 10 V gate drive. It withstands a drain-source voltage of 500 V and operates within a junction temperature range of -55°C to +150°C. The module dissipates up to 500 W of power and includes a built-in diode configuration.

Single FETs, MOSFETs Feature Summary

• Power MOS V® technology minimizes the JFET effect to reduce on-resistance and increase packing density.
• SOT-227-4 ISOTOP® package design facilitates efficient thermal management via baseplate mounting.
• Integrated body diode provides inherent freewheeling capability for inductive load switching.

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Motor control drives
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'VR' against the official datasheet to confirm it denotes the correct tube packaging variant rather than a different electrical specification. Ensure the ordering part number matches the exact pinout and thermal interface requirements of the target application circuit before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a robust, high-current single-chip solution is required for medium-voltage applications. The SOT-227-4 form factor offers a balance between current handling capacity and board space efficiency compared to larger discrete modules, suitable for designs prioritizing thermal performance without excessive footprint.

Single FETs, MOSFETs Part Context

This device belongs to the APT50M series of high-voltage N-channel enhancement mode MOSFETs. It represents a generation of devices engineered to optimize the trade-off between conduction losses and switching speeds through advanced cell architecture improvements over previous silicon carbide or standard planar technologies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the APT50M50JVR (lower on-resistance) and APT38M50J (lower current rating). Verify that any replacement maintains the same SOT-227-4 mechanical dimensions and thermal characteristics to ensure compatibility with existing heatsinking infrastructure.