Single FETs, MOSFETs APT5510JFLL product image

APT5510JFLL

$20.79
  • Description:MOSFET N-CH 550V 44A ISOTOP
  • Series:POWER MOS 7®
  • Mfr:Microsemi Corporation
  • Package:Tube

SKU:2b077d831a92 Category: Brand:

  
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APT5510JFLL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 550V 44A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5510JFLL

  • Description:MOSFET N-CH 550V 44A ISOTOP
  • Series:POWER MOS 7®
  • Mfr:Microsemi Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):550 V
  • Current - Continuous Drain (Id) @ 25°C:44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:100mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:5823 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):463W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:ISOTOP®
  • Package / Case:SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT5510JFLL

APT5510JFLL

Single FETs, MOSFETs Overview

The APT5510JFLL is a Power MOS 7 N-Channel enhancement mode power MOSFET in an ISOTOP SOT-227 package. It features a 550V drain-source breakdown voltage and a continuous drain current of 44A at 25°C case temperature. The maximum on-state resistance is 0.100Ω at VGS=10V and ID=22A. Total gate charge is typically 124nC at VGS=10V. The device includes a fast recovery body diode with a peak reverse recovery time of 280ns at 25°C.

Single FETs, MOSFETs Feature Summary

  • Power MOS 7 technology reduces conduction and switching losses via lowered RDS(ON) and gate charge.
  • ISOTOP package design provides increased power dissipation and easier driving characteristics.
  • Fast recovery body diode supports high-speed switching applications.

Single FETs, MOSFETs Applications

  • High frequency power conversion circuits
  • Motor control systems
  • Inductive load switching

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation, as documentation references Advanced Power Technology (APT). Confirm the specific datasheet revision matches the required electrical parameters. Ensure handling procedures account for electrostatic discharge sensitivity inherent to MOSFET devices.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage switching with low thermal impedance. The ISOTOP package facilitates direct mounting to heatsinks. Evaluate thermal management requirements against the junction-to-case thermal resistance of 0.27°C/W for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS 7 family of N-Channel enhancement mode MOSFETs. It utilizes a patented metal gate structure to achieve lower input capacitance and Miller capacitance compared to previous generations, facilitating easier driver design.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility if substituting with other SOT-227 MOSFETs. Verify that replacement parts meet or exceed the 550V breakdown voltage and 44A continuous current ratings to maintain circuit safety margins.

APT5510JFLLAPT5510JFLL
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