APT58M50JCU2

Single FETs, MOSFETs Overview

The APT58M50JCU2 is a single N-channel Power MOS 8™ MOSFET module with an integrated Silicon Carbide (SiC) chopper diode, housed in an ISOTOP® SOT-227 chassis-mount package. It features a drain-source voltage of 500 V and a continuous drain current of 58 A at case temperature. The device exhibits a maximum on-resistance of 65 mΩ at 10 V gate drive and 42 A. Key electrical parameters include a maximum gate charge of 340 nC, a maximum input capacitance of 13500 pF, and a maximum threshold voltage of 5 V. The module supports a power dissipation of 543 W at case temperature and operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Integrates a high-speed N-channel MOSFET with a complementary Silicon Carbide (SiC) boost chopper diode for enhanced switching performance.
• Utilizes the ISOTOP® SOT-227 chassis-mount package to provide robust thermal management and low parasitic inductance.
• Leverages Microchip's POWER MOS 8™ technology to achieve low conduction losses and fast switching characteristics.

Single FETs, MOSFETs Applications

• Boost chopper circuits
• High-frequency DC-DC converters
• Power factor correction (PFC) stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'JCU2' against the official Microchip datasheet to confirm the inclusion of the SiC diode and the exact pinout configuration. Ensure that the ordering documentation matches the required thermal interface specifications for the SOT-227 package. Cross-reference the component marking with the manufacturer's latest product change notifications to guarantee authenticity and compliance with current manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when designing applications requiring a combined MOSFET and freewheeling diode solution in a compact chassis-mount form factor. The integrated SiC diode offers superior reverse recovery characteristics compared to standard silicon alternatives, making it suitable for high-efficiency power conversion topologies. Evaluate the thermal resistance requirements of the system to ensure the 543 W dissipation rating aligns with the available heatsinking infrastructure.

Single FETs, MOSFETs Part Context

This part belongs to the APT58M50 series of discrete semiconductor modules manufactured by Microchip Technology. It is categorized under Discrete and Power Modules, specifically Single FETs and MOSFETs. The device represents an evolution of the base APT58M50 model, incorporating advanced packaging and compound semiconductor technologies to meet the demands of modern high-power electronic systems.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material. Verify compatibility with existing designs by comparing pinouts, thermal characteristics, and electrical ratings before considering alternative components from other manufacturers.