Single FETs, MOSFETs APT60M60JLL product image

APT60M60JLL

$80.54
  • Description:MOSFET N-CH 600V 70A ISOTOP
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube

SKU:43a564f3c512 Category: Brand:

  
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APT60M60JLL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 70A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT60M60JLL

  • Description:MOSFET N-CH 600V 70A ISOTOP
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id:5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs:289 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:12630 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):694W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:ISOTOP®
  • Package / Case:SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT60M60JLL

APT60M60JLL

Single FETs, MOSFETs Overview

The APT60M60JLL is a Power MOS 7 N-Channel enhancement mode power MOSFET manufactured by Microchip Technology. It utilizes the ISOTOP SOT-227 package and operates with a drain-source breakdown voltage of 600V and a continuous drain current of 70A at TC = 25°C. The device features a maximum on-state resistance of 0.060Ω at VGS = 10V and ID = 35A. Total power dissipation reaches 694W at 25°C case temperature, supported by a junction-to-case thermal resistance of 0.18°C/W. Operating and storage temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Power MOS 7 technology combines low conduction losses with fast switching speeds via a patented metal gate structure.
  • ISOTOP SOT-227 package design provides increased power dissipation capabilities and simplified mounting.
  • Optimized gate charge and Miller capacitance characteristics facilitate easier driver requirements.

Single FETs, MOSFETs Applications

  • High-efficiency DC-DC converters
  • Motor control systems
  • Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status against manufacturing dates. Ensure electrostatic discharge handling protocols are strictly followed during assembly. Validate thermal interface material compatibility for the ISOTOP package to maintain specified thermal performance limits.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and robust current handling are required in a single-channel configuration. Evaluate thermal management solutions based on the 0.18°C/W junction-to-case resistance. Consider the specific gate charge requirements relative to the driving circuit's capability to ensure optimal switching transitions.

Single FETs, MOSFETs Part Context

This device belongs to the Power MOS 7 family, representing an evolution in silicon power MOSFET technology. It succeeds earlier generations by addressing both conduction and switching losses simultaneously. The ISOTOP packaging standardizes mechanical integration for high-power discrete modules within industrial electronics frameworks.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the APT60M60J and APT60M60L variants within the same manufacturer portfolio. Verify pinout compatibility and thermal resistance specifications before implementation. Cross-reference datasheet electrical parameters to ensure equivalent performance under identical operating conditions.

APT60M60JLLAPT60M60JLL
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