APT7F100B

Single FETs, MOSFETs Overview

The APT7F100B is a single N-Channel Power MOSFET from Microchip Technology, utilizing silicon technology and the POWER MOS 8 architecture. It features a 1 kV drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 7 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 1.76 Ohms at Vgs = 10 V. Key switching parameters include a gate charge (Qg) of 58 nC, with typical turn-on and turn-off delays of 24 ns and 77 ns, respectively. It operates within a junction temperature range of -55°C to +150°C and offers a power dissipation rating of 290 W in a TO-247-3 through-hole package.

Single FETs, MOSFETs Feature Summary

• Incorporates POWER MOS 8 technology for optimized performance characteristics.
• Features fast recovery diode integration suitable for high-frequency switching applications.
• Designed with enhanced avalanche ruggedness capabilities.

Single FETs, MOSFETs Applications

• High-voltage resonant converter circuits
• Uninterruptible power supply (UPS) systems
• Motor control drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the official Microchip datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly from the manufacturer's documentation prior to procurement. Ensure the component matches the required thermal management requirements for the intended application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-Channel MOSFET with moderate current handling is required. The 1.76 Ohm Rds On provides a balance between conduction losses and cost for lower-current applications. Consider the TO-247-3 package for through-hole mounting solutions requiring robust mechanical stability and adequate heat sinking capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of discrete semiconductors manufactured by Microchip Technology. The series utilizes advanced silicon planar edge termination technology to achieve high voltage blocking capabilities. These components are designed for general-purpose switching applications requiring reliable performance under high-stress conditions.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent parts within the same voltage and current ratings. Verify pinout compatibility and thermal resistance values before replacing with alternative manufacturers' offerings.