APT7F80K

Description：MOSFET N-CH 800V 7A TO220
Series：POWER MOS 8™
Mfr：Microsemi Corporation
Package：Tube

SKU:a55221e40132 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APT7F80K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 800V 7A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT7F80K

Description：MOSFET N-CH 800V 7A TO220
Series：POWER MOS 8™
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.5Ohm @ 4A, 10V
Vgs(th) (Max) @ Id：5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1335 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220 [K]
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for APT7F80K

APT7F80K

Single FETs, MOSFETs Overview

The APT7F80K is an N-channel FREDFET power MOSFET rated for 800V drain-source breakdown voltage and 7A continuous drain current. It features a maximum on-resistance of 1.50Ω at 25°C and a reverse recovery time of 160ns or less. The device operates within a junction temperature range of -55°C to 150°C and utilizes a TO-220 package.

Single FETs, MOSFETs Feature Summary

Optimized body diode with reduced reverse recovery time and high dv/dt capability for ZVS applications
Ultra-low reverse transfer capacitance for improved noise immunity
Poly-silicon gate structure controls di/dt to minimize EMI
Rated for repetitive avalanche energy

Single FETs, MOSFETs Applications

ZVS phase shifted full bridge converters
Half bridge topologies
PFC boost converters
Buck converters
Flyback converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact pinout, lead finish, and packaging configuration. Ensure the component meets RoHS compliance requirements as stated in the datasheet specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency switching applications requiring low EMI and high reliability. The optimized body diode characteristics make it suitable for resonant and soft-switching topologies where fast reverse recovery is critical to prevent shoot-through and reduce switching losses.

Single FETs, MOSFETs Part Context

This part belongs to Microsemi's Power MOS 8 series, designed as a high-speed, high-voltage switch-mode power MOSFET. The FREDFET variant specifically integrates a drain-source body diode optimized for high reliability in zero-voltage switching circuits through reduced reverse recovery charge and soft recovery characteristics.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 800V rating, TO-220 package, and thermal resistance specifications.