APT7M120S

Single FETs, MOSFETs Overview

The APT7M120S is a single N-channel Power MOSFET from Microchip Technology, utilizing Silicon technology and the Power MOS 8 process. It features a D3PAK-3 (TO-268) surface-mount package with a tab for thermal management. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 5 A to 8 A, and a maximum on-resistance of 2.1 Ohms. The device supports a gate-source voltage range of -30 V to +30 V, with a typical threshold voltage of 4 V. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 335 W.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1.2 kV drain-source breakdown voltage for robust switching applications.
• Optimized low on-resistance characteristics to minimize conduction losses in power circuits.
• Fast switching performance enabled by the Power MOS 8 technology for efficient high-frequency operation.

Single FETs, MOSFETs Applications

• High-voltage DC-DC converters
• Motor control systems
• Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes to ensure compatibility with your design requirements. Confirm that the D3PAK-3 package dimensions match your PCB footprint and thermal design constraints. Check for any product change notifications or lifecycle status updates before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with high voltage blocking capability is required in a surface-mount configuration. Consider the 2.1 Ohm on-resistance and 5 A to 8 A current rating against your load requirements. Ensure the thermal management solution can handle the 335 W dissipation rating under your specific operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's Power MOS 8 family of discrete semiconductors. It is designed for general-purpose high-voltage switching applications. The D3PAK package provides a balance between electrical performance and ease of automated assembly compared to through-hole alternatives.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 1.2 kV voltage rating, N-channel polarity, and D3PAK-3 package. Verify that substitute parts offer comparable on-resistance and current handling capabilities to maintain circuit performance.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage for the APT7M120S?

The absolute maximum gate-source voltage is ±30 V.

Does the APT7M120S support surface mount installation?

Yes, it is housed in a D3PAK-3 (TO-268) surface-mount package.