APT8011JLL

Single FETs, MOSFETs Overview

The APT8011JLL is a single N-channel MOSFET module from the POWER MOS 7 series, manufactured by Microchip Technology. It utilizes silicon technology and features an ISOTOP package (SOT-227) designed for screw mount installation. Key electrical parameters include a drain-source voltage of 800 V, a continuous drain current of 51 A at case temperature, and a maximum on-resistance of 110 mOhms. The device supports a gate-source voltage range of -30 V to +30 V with a threshold voltage of 5 V. It offers a power dissipation capacity of 650 W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration utilizing POWER MOS 7 silicon technology
• ISOTOP insulated base design for direct heatsink mounting
• High voltage rating suitable for demanding power switching applications

Single FETs, MOSFETs Applications

• Industrial motor drives
• Power supply inverters
• Welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix JLL against the official datasheet to confirm pinout and thermal characteristics. Ensure the ordering documentation matches the required voltage and current ratings for the target application. Confirm RoHS compliance status through the manufacturer's latest product change notifications or environmental files before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V blocking capability and low on-resistance are required in a robust, insulated package. The ISOTOP form factor simplifies thermal management by allowing direct attachment to a heatsink without additional insulators. Consider the 51 A current rating and 650 W power dissipation limits relative to the system's cooling capabilities and ambient operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of discrete power modules, which are engineered for high-reliability industrial environments. The POWER MOS 7 technology provides optimized trade-offs between conduction losses and switching performance. These modules are typically used as primary switching elements in medium-to-high power conversion circuits where ruggedness and thermal stability are critical.