APT8018JN

Single FETs, MOSFETs Overview

The APT8018JN is an N-channel enhancement mode high voltage power MOSFET manufactured by Microsemi Corporation. It utilizes the ISOTOP package, which provides a low thermal resistance path from junction to case for efficient heat dissipation. The device features a drain-source breakdown voltage of 800V and a continuous drain current rating of 40A at a case temperature of 25°C. Its maximum on-state resistance is specified at 0.18 ohms under standard test conditions. The component supports a total power dissipation of 690W and operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High voltage capability with 800V drain-source breakdown rating
• Low thermal resistance design utilizing the ISOTOP package structure
• Robust pulsed current handling capacity for inductive load switching
• Enhanced mode operation with defined gate threshold characteristics

Single FETs, MOSFETs Applications

• High voltage DC-DC converter circuits
• Motor control systems requiring robust switching elements
• Industrial power supply topologies
• Inverter applications in power electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status of the datasheet prior to finalizing designs, as electrical parameters may be subject to change without notice. Confirm that the procurement channel supplies genuine Microsemi components to ensure reliability in critical applications. Check for any specific handling requirements related to electrostatic discharge sensitivity during storage and assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require high voltage isolation combined with moderate current handling capabilities. The ISOTOP package is suitable for applications where direct mounting to a heatsink is required to manage thermal loads effectively. Ensure the gate drive circuitry can support the specified gate-source voltage limits and charge requirements for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the family of N-channel enhancement mode power MOSFETs offered by Microsemi. These devices are engineered for high-voltage power switching applications where efficiency and thermal management are critical. The ISOTOP packaging technology distinguishes these components by providing a large metal tab for direct thermal coupling to external cooling structures.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides or contact the manufacturer directly for verified equivalent parts. Do not assume compatibility based solely on package dimensions or general parameter ranges. Verify that any alternative component meets the specific voltage, current, and thermal requirements of the original design.