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APT8020B2LLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 38A T-MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT8020B2LLG
- Description：MOSFET N-CH 800V 38A T-MAX
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：200mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：195 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：5200 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：694W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™ [B2]
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for APT8020B2LLG
Single FETs, MOSFETs Overview
The APT8020B2LLG is an N-Channel power MOSFET from Microchip Technology, utilizing MOS 7 technology. It features a maximum drain-source voltage of 800 V and a continuous drain current of 38 A at case temperature. The device has a maximum on-state resistance of 220 mΩ and supports power dissipation up to 694 W at case temperature. It operates within a temperature range of -55 °C to +150 °C and uses a T-MAX (TO-264) through-hole package.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 800 V drain-source breakdown
- Low on-state resistance for efficient conduction
- Robust thermal performance supporting high power dissipation
- Wide operating temperature range for harsh environments
Single FETs, MOSFETs Applications
- Industrial motor drives
- Power supply inverters
- High-voltage switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including suffixes such as B2LLG against official Microchip documentation to ensure correct pinout and electrical specifications. Confirm RoHS compliance status and manufacturing origin requirements prior to ordering. Cross-reference datasheet revisions to confirm parameter consistency.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage isolation and moderate current handling in through-hole designs. Evaluate thermal management needs given the 694 W dissipation rating at case temperature. Ensure gate drive voltage remains within the ±30 V limit to prevent oxide breakdown.
Single FETs, MOSFETs Part Context
This device belongs to the APT8020 series of N-Channel MOSFETs manufactured by Microchip Technology. It shares the MOS 7 technology platform with variants like APT8020LLLG but differs in packaging and specific electrical tolerances. The T-MAX package provides enhanced thermal conductivity compared to standard TO-247 packages.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other 800 V N-Channel MOSFETs in TO-264 packages with comparable Rds(on) and current ratings. Verify pin compatibility and thermal characteristics before substitution.
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