APTC60DAM35T1G

$29.27

Description：MOSFET N-CH 600V 72A SP1
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:1cd33d03ee62 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APTC60DAM35T1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 600V 72A SP1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTC60DAM35T1G

Description：MOSFET N-CH 600V 72A SP1
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：35mOhm @ 72A, 10V
Vgs(th) (Max) @ Id：3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs：518 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：14000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：416W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SP1
Package / Case：SP1

Single FETs, MOSFETs datasheet and documents for APTC60DAM35T1G

APTC60DAM35T1G

Single FETs, MOSFETs Overview

The APTC60DAM35T1G is a Super Junction MOSFET power module featuring an integrated chopper diode. It provides a drain-source breakdown voltage of 600V and a maximum on-resistance of 35mΩ at 25°C. The continuous drain current is rated at 72A at 25°C case temperature, with a pulsed current capability of 200A. Maximum power dissipation reaches 416W at 25°C. The package includes an internal NTC thermistor for temperature monitoring and offers 2500V RMS isolation voltage.

Single FETs, MOSFETs Feature Summary

Ultra low RDSon and gate charge for high frequency operation
Internal thermistor for temperature monitoring
Very rugged avalanche energy rated design
Direct mounting to heatsink with isolated package

Single FETs, MOSFETs Applications

AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction

Single FETs, MOSFETs Procurement Notes

Verify the specific part number against official Microsemi documentation to ensure compatibility with your system requirements. Confirm that the SP1 package outline and mounting torque specifications align with your thermal management strategy. Check for any product change notifications or errata related to the SP1 module package revision before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high integration and low stray inductance. The inclusion of a chopper diode simplifies circuit design by combining switching and freewheeling functions. Ensure the operating junction temperature remains within the -40°C to 150°C range. Consider the 2500V isolation voltage when designing for safety-critical environments.

Single FETs, MOSFETs Part Context

This device belongs to the CoolMOS family developed by Infineon Technologies AG, distributed by Microsemi. It utilizes Super Junction technology to achieve superior performance compared to traditional MOSFETs. The SP1 package format allows for low profile installation and easy PCB mounting through solderable terminals for both power and signal connections.