Single FETs, MOSFETs APTM120SK56T1G product image

APTM120SK56T1G

$28.29
  • Description:MOSFET N-CH 1200V 18A SP1
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk

SKU:e3e5af9ae191 Category: Brand:

  
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APTM120SK56T1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1200V 18A SP1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM120SK56T1G

  • Description:MOSFET N-CH 1200V 18A SP1
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:672mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:7736 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):390W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:SP1
  • Package / Case:SP1

Single FETs, MOSFETs datasheet and documents for APTM120SK56T1G

APTM120SK56T1G

Single FETs, MOSFETs Overview

The APTM120SK56T1G is a Buck chopper MOSFET power module manufactured by Microsemi Corporation. It features an N-channel Power MOS 8™ transistor and an integrated chopper diode within an isolated SP1 package. The device supports a drain-source breakdown voltage of 1200 V and a continuous drain current of 18 A at Tc = 25°C. The maximum drain-source on resistance is 672 mΩ, with a typical value of 560 mΩ at 25°C. Maximum power dissipation is rated at 390 W at Tc = 25°C. The module includes an internal NTC thermistor for temperature monitoring.

Single FETs, MOSFETs Feature Summary

  • Power MOS 8™ technology providing low RDSon, low input and Miller capacitance, and low gate charge
  • Avalanche energy rated construction ensuring high ruggedness
  • Internal NTC thermistor for precise temperature monitoring
  • Solderable terminals for both power and signal connections to facilitate easy PCB mounting

Single FETs, MOSFETs Applications

  • AC and DC motor control
  • Switched Mode Power Supplies
  • Buck chopper circuits

Single FETs, MOSFETs Procurement Notes

Verify the component status as discontinued or obsolete before procurement planning. Confirm that the SP1 package outline and mounting torque specifications (M4, 2-3 N.m) align with existing thermal management designs. Ensure electrostatic discharge handling procedures are followed during installation due to device sensitivity.

Single FETs, MOSFETs Selection Notes

Select this module for applications requiring high-frequency operation and direct heatsink mounting. The isolated package design allows for low junction-to-case thermal resistance. Verify that the required gate drive voltage matches the 10V specification for optimal RDSon performance. Consider the integrated chopper diode characteristics if synchronous rectification is not utilized.

Single FETs, MOSFETs Part Context

This component belongs to the Microsemi Power MOS 8™ discrete semiconductor product line. It is designed as a high-voltage power module integrating MOSFET and diode technologies. The manufacturer is Microsemi Corporation, now part of Microchip Technology. The module utilizes silicon-based MOSFET technology housed in an SP1 screw-mount package.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip replacement guides for equivalent SP1 package modules with matching voltage and current ratings.

APTM120SK56T1GAPTM120SK56T1G
$28.29
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