APTM20UM09SG

$80.02

Description：MOSFET N-CH 200V 195A MODULE
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:a961eeec5197 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APTM20UM09SG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 200V 195A MODULE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM20UM09SG

Description：MOSFET N-CH 200V 195A MODULE
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9mOhm @ 74.5A, 10V
Vgs(th) (Max) @ Id：5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：217 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：12300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：780W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：Module
Package / Case：J3 Module

Single FETs, MOSFETs datasheet and documents for APTM20UM09SG

APTM20UM09SG

Single FETs, MOSFETs Overview

The APTM20UM09SG is a Power MOS 7® MOSFET power module featuring an integrated single switch and series/parallel diodes. It provides a drain-source breakdown voltage of 200 V and a continuous drain current of 195 A at 25°C case temperature. The maximum on-resistance is 9 mΩ, with a maximum power dissipation of 780 W. The device includes Kelvin source connections for low-stray-inductance driving and offers high-level integration within an isolated package.

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology providing low on-resistance and low gate charge
Kelvin source connection enabling easy drive with low stray inductance
Avalanche energy rated for rugged operation
Isolated package allowing direct mounting to heatsink

Single FETs, MOSFETs Applications

Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' against official documentation to confirm compliance status or material composition differences compared to the base model. Confirm thermal interface requirements and mounting torque specifications (M4: 1.2 N.m, M6: 3-5 N.m) during procurement planning to ensure proper installation and electrical isolation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-frequency operation and robust avalanche capability. Consider the low junction-to-case thermal resistance and the integrated diode options when designing circuits that benefit from reduced parasitic inductance and simplified layout through the use of Kelvin source connections.

Single FETs, MOSFETs Part Context

This part belongs to the APTM series of MOSFET power modules manufactured by Advanced Power Technology (APT). These modules integrate Power MOS 7 technology to deliver high performance in compact, isolated packages suitable for demanding power electronics environments.