APTM50UM19SG

Single FETs, MOSFETs Overview

The APTM50UM19SG is a Power MOS 7 N-channel MOSFET module with an integrated anti-parallel diode. It features a 500V drain-source breakdown voltage and a continuous drain current of 163A at 25°C case temperature. The maximum on-resistance is 19mΩ. The package includes Kelvin source connections for low stray inductance drive and M4 signal connectors. Thermal resistance from junction to case is 0.11°C/W for the transistor.

Single FETs, MOSFETs Feature Summary

• Power MOS 7 technology providing low on-resistance, low gate charge, and high ruggedness
• Kelvin source connection enabling easy drive with reduced stray inductance
• Integrated anti-parallel diode with series and parallel configurations
• Isolated package allowing direct mounting to heatsink

Single FETs, MOSFETs Applications

• Motor control systems
• Switched Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' against official Microchip or Advanced Power documentation to confirm material composition or environmental compliance status. Confirm that the datasheet revision matches the ordered unit. Ensure handling procedures account for Electrostatic Discharge sensitivity as specified in the absolute maximum ratings section.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency power applications requiring robust avalanche energy ratings and low thermal resistance. The integrated diode simplifies circuit design by eliminating external freewheeling components. Evaluate the 163A continuous current capability against the specific thermal management strategy required for the target application environment.

Single FETs, MOSFETs Part Context

This module belongs to the APTM50 series of discrete semiconductor modules manufactured by Microchip Technology. It utilizes Power MOS 7 technology to achieve high performance in power switching applications. The product line focuses on integrating MOSFETs with anti-parallel diodes for efficient power conversion.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible modules within the APTM50 series. Verify pinout compatibility and electrical parameters before replacing existing units.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The device is rated for 50 mJ of repetitive avalanche energy.

How does the Kelvin source improve performance?

The Kelvin source provides a dedicated path for the gate drive return, minimizing the impact of stray inductance in the main current path during switching.