AS1M080120P

$11.44

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube

SKU:fe8882e4de53 Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

AS1M080120P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is N-CHANNEL SILICON CARBIDE POWER. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS1M080120P

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：79 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1475 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：192W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AS1M080120P

AS1M080120P

Single FETs, MOSFETs Overview

The AS1M080120P is an N-Channel Silicon Carbide Power MOSFET in a TO-247-3 package. It features a 1200V drain-source voltage and a maximum on-resistance of 98mΩ at VGS=20V. The device supports a continuous drain current of 36A at 25°C case temperature, with a pulsed current rating of 80A. Key electrical parameters include a gate threshold voltage of 4.0V (max) and a total gate charge of 9nC. Thermal performance includes a junction-to-case resistance of 0.6°C/W and a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling
High-speed switching capability supported by low capacitance values
Designed for easy paralleling and simple drive requirements

Single FETs, MOSFETs Applications

Power Supplies
Switch Mode Power Supplies
High Voltage DC/DC Converters
Motor Drivers
Pulsed Power Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation as ANBON SEMICONDUCTOR (INT'L) LIMITED against the datasheet documentation provided. Confirm that the TO-247-3 package dimensions and thermal characteristics match the required system constraints. Ensure compatibility with the specified 1200V operating environment and check for any specific handling requirements associated with Silicon Carbide devices during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust switching performance. The 1200V rating suits systems needing significant voltage isolation. Consider the 98mΩ on-resistance for conduction loss calculations. Evaluate the thermal management needs based on the 0.6°C/W junction-to-case resistance to ensure the junction temperature remains within the 150°C limit under expected load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the class of Silicon Carbide Power MOSFETs, which are utilized for their superior material properties compared to traditional silicon. These components are engineered to handle higher voltages and temperatures while maintaining lower switching losses. The TO-247-3 package provides a standardized form factor for mounting on heatsinks, facilitating effective thermal dissipation in industrial power electronics designs.