AS3400

$0.20

Description：N-CHANNEL ENHANCEMENT MODE MOSFE
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:883a32ee2be9 Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

AS3400 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is N-CHANNEL ENHANCEMENT MODE MOSFE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS3400

Description：N-CHANNEL ENHANCEMENT MODE MOSFE
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.8 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：535 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for AS3400

AS3400

Single FETs, MOSFETs Overview

The AS3400 is an N-Channel Enhancement Mode MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It features a SOT-23 package with a Drain-Source Voltage (VDS) of 30V and a Gate-Source Voltage (VGS) of ±12V. The device supports a continuous drain current (ID) of 5.6A and a pulsed drain current (IDM) of 23A. Maximum on-resistance (RDS(on)) values are 27mΩ at VGS=10V, 33mΩ at VGS=4.5V, and 51mΩ at VGS=2.5V. Power dissipation is rated at 1.2W, with a junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench process technology for high-density cell design
Ultra-low on-resistance characteristics
Surface-mount SOT-23 packaging

Single FETs, MOSFETs Applications

Load Switch for Portable Devices
DC/DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as ANBON SEMICONDUCTOR (INT'L) LIMITED against official datasheet documentation. Confirm the specific ordering suffixes and tape/reel specifications required for your assembly line. Ensure that the component's absolute maximum ratings align with your system's operational voltage and current limits before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact N-Channel MOSFET with a 30V rating. The low RDS(on) values across various gate voltages make it suitable for efficient power switching in portable electronics. Verify that the thermal management capabilities meet the 1.2W dissipation requirement within the intended operating environment.

Single FETs, MOSFETs Part Context

This component belongs to the general category of discrete power semiconductors designed for switching applications. It utilizes silicon-based enhancement mode technology typical for low-voltage power management solutions. The SOT-23 form factor allows for integration into space-constrained circuit boards common in modern consumer and industrial electronic devices.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer or authorized distributors for verified cross-reference data when evaluating alternative components for this specific application.