ATP113-TL-H

$2.06

Description：MOSFET P-CH 60V 35A ATPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c529e2c348ef Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

ATP113-TL-H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 35A ATPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ATP113-TL-H

Description：MOSFET P-CH 60V 35A ATPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：29.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：ATPAK
Package / Case：ATPAK (2 Leads+Tab)

Single FETs, MOSFETs datasheet and documents for ATP113-TL-H

ATP113-TL-H

Single FETs, MOSFETs Overview

The ATP113-TL-H is a P-Channel Power MOSFET manufactured by onsemi, housed in the ATPAK surface-mount package. It features a drain-to-source voltage rating of -60 V and a continuous drain current capacity of -35 A at a case temperature of 25°C. The device exhibits a maximum static drain-to-source on-state resistance of 29.5 mΩ when driven at -10 V with an 18 A load. Electrical characteristics include a total gate charge of 55 nC and an input capacitance of 2400 pF. The component supports a maximum allowable power dissipation of 50 W at 25°C and operates with a channel temperature up to 150°C.

Single FETs, MOSFETs Feature Summary

Integrated protection diode for circuit safeguarding
Capable of operation with low gate drive voltages
Constructed using halogen-free compliant materials

Single FETs, MOSFETs Applications

Power switching circuits requiring P-channel control
Low-side or high-side load management systems
DC-DC converter topologies utilizing single ATPAK packages

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and check for specific material declarations regarding halogen-free requirements. Review datasheet revision history for any updates to electrical parameters or package dimensions prior to finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management capabilities based on the specified 50 W power dissipation limit at 25°C case temperature. Ensure gate driver signals align with the recommended -10 V drive level for optimal on-state resistance performance. Consider the 29.5 mΩ maximum resistance value for efficiency calculations under full load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the ATPAK family of single-channel power MOSFETs designed for compact surface-mount applications. The ATPAK package integrates two leads and a copper tab for efficient heat transfer. This specific part number represents the P-Channel variant within the series, distinguished by its -60 V breakdown voltage and -35 A current handling capability.