Single FETs, MOSFETs AUIRF1010EZS product image

AUIRF1010EZS

$1.30
  • Description:AUIRF1010 - 55V-60V N-CHANNEL AU
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk

SKU:3f3a8c2bca0c Category: Brand:

  
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AUIRF1010EZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is AUIRF1010 - 55V-60V N-CHANNEL AU. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF1010EZS

  • Description:AUIRF1010 - 55V-60V N-CHANNEL AU
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:8.5mOhm @ 51A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2810 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF1010EZS

AUIRF1010EZS

Single FETs, MOSFETs Overview

The AUIRF1010EZS is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes a D2PAK (TO-263-3) surface-mount package designed for high-current applications. The device features a drain-source voltage rating of 55 V and supports a continuous drain current of 44 A. Key electrical characteristics include a maximum on-resistance of 7.5 mΩ at 10 V gate drive and a typical total gate charge of 63 nC. It operates within a junction temperature range of -55 °C to +175 °C and meets AEC-Q100 qualification standards.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability compliant with AEC-Q100 standards
  • Low on-resistance for efficient power switching
  • High thermal performance suitable for demanding environments

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • Motor control circuits in vehicles
  • Lighting management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix configuration against official Infineon documentation to ensure compatibility with required automotive standards. Confirm availability status as manufacturing lifecycles may change. Cross-reference pinout and thermal pad specifications with target PCB layout requirements before integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust automotive certification and low conduction losses. Evaluate thermal dissipation capabilities relative to the D2PAK package limits. Ensure gate drive voltage aligns with the specified threshold for optimal Rds(on) performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, optimized for high-efficiency switching. The 'AU' prefix indicates automotive qualification, distinguishing it from standard industrial variants. It represents a solution for compact, high-power density applications in vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-references such as IRFR1010Z or IRF1010ES, noting differences in package type and exact electrical ratings. Verify that any substitute maintains AEC-Q100 compliance if automotive use is required.

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