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AUIRF1010EZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is AUIRF1010 - 55V-60V N-CHANNEL AU. Review the specifications below when checking this part for your BOM.
The AUIRF1010EZS is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes a D2PAK (TO-263-3) surface-mount package designed for high-current applications. The device features a drain-source voltage rating of 55 V and supports a continuous drain current of 44 A. Key electrical characteristics include a maximum on-resistance of 7.5 mΩ at 10 V gate drive and a typical total gate charge of 63 nC. It operates within a junction temperature range of -55 °C to +175 °C and meets AEC-Q100 qualification standards.
Verify the specific suffix configuration against official Infineon documentation to ensure compatibility with required automotive standards. Confirm availability status as manufacturing lifecycles may change. Cross-reference pinout and thermal pad specifications with target PCB layout requirements before integration.
Select this component for designs requiring robust automotive certification and low conduction losses. Evaluate thermal dissipation capabilities relative to the D2PAK package limits. Ensure gate drive voltage aligns with the specified threshold for optimal Rds(on) performance.
This part belongs to the HEXFET family of power MOSFETs, optimized for high-efficiency switching. The 'AU' prefix indicates automotive qualification, distinguishing it from standard industrial variants. It represents a solution for compact, high-power density applications in vehicle electronics.
Check for direct cross-references such as IRFR1010Z or IRF1010ES, noting differences in package type and exact electrical ratings. Verify that any substitute maintains AEC-Q100 compliance if automotive use is required.
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