AUIRF1405

Single FETs, MOSFETs Overview

The AUIRF1405 is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes a TO-220AB package and features a 55V drain-to-source breakdown voltage (V(BR)DSS). The device supports a continuous drain current of 169A when silicon-limited at a case temperature of 25°C, or 75A when package-limited. The maximum static drain-to-source on-resistance (RDS(on)) is 5.3mΩ at VGS=10V. Key electrical parameters include a total gate charge (Qg) of up to 260nC, a peak diode recovery dv/dt of 5.0V/ns, and a maximum junction temperature rating of 175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for reliability in vehicle environments
• Stripe planar technology design achieving ultra-low on-resistance per silicon area
• Capable of handling repetitive avalanche energy and ruggedized against unclamped inductive switching events
• Fast switching performance combined with high peak diode recovery dv/dt capability

Single FETs, MOSFETs Applications

• Electric Power Steering (EPS) systems
• Anti-lock Braking System (ABS) controllers
• Wiper control modules
• Climate control actuators
• Power door lock mechanisms

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging format, as the base part number corresponds to tube packaging. Confirm that the component meets the necessary AEC-Q101 qualification levels for your target automotive application. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive-grade reliability and low conduction losses in 12V or 24V systems. The TO-220AB package facilitates through-hole mounting and heatsinking. Consider the package-limited current rating of 75A for steady-state thermal design rather than the higher silicon-limited value. Evaluate the gate charge requirements against your driver capabilities to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents the automotive variant of the IRF1405 series, distinguished by its compliance with strict automotive quality standards. The product line focuses on providing high-efficiency switching solutions for demanding power electronics environments found in modern vehicles.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IRF1405ZSTRLPBF and IRF1405LPBF. Verify that any replacement maintains the same TO-220 footprint and meets AEC-Q101 requirements if automotive certification is mandatory.

Single FETs, MOSFETs FAQ

What is the difference between the silicon-limited and package-limited drain current ratings?

The silicon-limited rating of 169A represents the theoretical maximum current the die can handle before thermal failure at 25°C case temperature. The package-limited rating of 75A reflects the maximum current the external leads and package structure can safely conduct without exceeding thermal limits.

Is the AUIRF1405 suitable for high-frequency switching applications?

Yes, the device features fast switching characteristics with typical rise and fall times of 190ns and 110ns respectively, making it suitable for various switching frequencies common in automotive power electronics.