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AUIRF2805S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 135A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AUIRF2805S
- Description：MOSFET N-CH 55V 135A D2PAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.7mOhm @ 104A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：230 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5110 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for AUIRF2805S
Single FETs, MOSFETs Overview
The AUIRF2805S is an automotive-grade N-channel enhancement mode MOSFET from Infineon's HEXFET family. It features a maximum drain-source voltage of 55 V and a continuous drain current of 135 A at 25°C. The device exhibits a maximum on-resistance of 4.7 mΩ at a gate-source voltage of 10 V. Packaged in a surface-mount D2PAK (TO-263) housing with four pins, it supports a power dissipation of 200 W. The component operates within a junction temperature range up to 175°C and includes a wide safe operating area.
Single FETs, MOSFETs Feature Summary
- Automotive qualification compliant with AEC-Q101 standards for high reliability
- Optimized low on-resistance for efficient power switching
- Wide Safe Operating Area (SOA) capability for robust performance under varying load conditions
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- High-side and low-side switching applications
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'S' indicates the correct package variant during procurement. Confirm that the component meets the required AEC-Q101 grade for your target automotive application. Ensure thermal management designs account for the specified power dissipation limits in the D2PAK package. Cross-reference the manufacturer datasheet for exact pinout and mounting specifications before integration.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring 55V blocking capability with high current handling. The low on-resistance minimizes conduction losses in power paths. Consider the thermal resistance characteristics for heat sinking requirements. Verify compatibility with standard gate drive voltages for optimal switching performance.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's HEXFET power MOSFET portfolio, designed for general-purpose and automotive switching. It utilizes silicon technology to provide a balance of low on-state resistance and fast switching speeds. The D2PAK package facilitates efficient thermal transfer to printed circuit boards.
Single FETs, MOSFETs Replacement Considerations
Check for direct replacements within the IRF2805 series or other 55V automotive-grade N-channel MOSFETs with comparable Rds(on) and current ratings. Ensure any substitute matches the D2PAK footprint and electrical specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
