AUIRF2903ZSTRL

Single FETs, MOSFETs Overview

The AUIRF2903ZSTRL is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 30V drain-source voltage rating and supports a continuous drain current of 160A at case temperature. The device exhibits a maximum on-resistance of 18 milliohms, enabling efficient power switching with low conduction losses. Designed for robust performance, it operates within a junction temperature range of -55°C to +175°C and offers a power dissipation capacity of 231W. The component is housed in a surface-mount D2PAK package.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q100 standards
• Advanced process technology for ultra-low on-resistance
• High thermal stability supporting operation up to 175°C
• Fast switching characteristics for efficient power management

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control applications
• Load switching circuits
• DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'S' indicates the D2PAK-3 (TO-252-3) surface mount package configuration. Confirm AEC-Q100 qualification status matches project requirements. Check manufacturer lifecycle status as end-of-life notices may affect long-term supply availability. Ensure thermal design accounts for the specified power dissipation limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current automotive solution is required. The 30V rating suits 12V or 24V automotive networks. Compare on-resistance and gate charge against alternatives for efficiency optimization. Verify that the D2PAK footprint fits the PCB layout constraints. Consider thermal resistance values for heatsinking requirements in enclosed environments.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's AUIRF series of automotive-grade HEXFET MOSFETs. These devices are engineered specifically for harsh automotive environments, combining silicon carbide gate technology with advanced planar cell design. The series emphasizes reliability, low Rds(on), and high short-circuit withstand capability for critical vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other AUIRF2903 variants such as AUIRF2903ZL for different packaging options. Cross-reference electrical parameters like Vds, Id, and Rds(on) carefully. Verify pinout compatibility and thermal characteristics before substitution.