Single FETs, MOSFETs AUIRF3205 product image

AUIRF3205

$1.59
  • Description:AUIRF3205 - 55V-60V N-CHANNEL AU
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:8958d1da1472 Category: Brand:

  
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AUIRF3205 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is AUIRF3205 - 55V-60V N-CHANNEL AU. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3205

  • Description:AUIRF3205 - 55V-60V N-CHANNEL AU
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:8mOhm @ 62A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:146 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3247 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRF3205

AUIRF3205

Single FETs, MOSFETs Overview

The AUIRF3205 is an automotive-grade N-channel HEXFET power MOSFET manufactured by International Rectifier. It features a TO-220AB package with a maximum drain-source voltage of 55V and a continuous drain current of 75A at 25°C case temperature. The device exhibits a maximum on-resistance of 8.0mΩ at VGS=10V and a total gate charge of 146nC. It supports a junction temperature range from -55°C to +175°C, complies with AEC-Q101 standards, and includes internal body diode characteristics such as a reverse recovery time of 104ns.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards for reliability in vehicle environments
  • Stripe planar technology design achieving low on-resistance per silicon area
  • Ruggedized device construction providing fast switching speed and high avalanche energy capability

Single FETs, MOSFETs Applications

  • Automotive power management systems
  • DC-DC converter circuits
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the complete part number matches the requested specification exactly. Confirm that the TO-220 tube packaging aligns with assembly requirements. Ensure the component meets the specific automotive grade designation required for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring robust performance under high thermal stress. The 55V rating suits low-voltage DC systems. Consider the 75A package-limited current and 8.0mΩ on-resistance for efficiency calculations in power switching stages.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs produced by International Rectifier. It utilizes advanced processing techniques to optimize performance metrics. The product line is designed to provide efficient and reliable solutions for demanding electronic applications across various industries.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed using specific electrical parameters and package dimensions to ensure functional compatibility.

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