Single FETs, MOSFETs AUIRF540Z product image

AUIRF540Z

$3.26
  • Description:MOSFET N-CH 100V 36A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:aa216b812671 Category: Brand:

  
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AUIRF540Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 36A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF540Z

  • Description:MOSFET N-CH 100V 36A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:26.5mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):92W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRF540Z

AUIRF540Z

Single FETs, MOSFETs Overview

The AUIRF540Z is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-220AB through-hole package and supports a drain-source voltage of 100V with a continuous drain current of 36A at 25°C case temperature. The device exhibits a maximum on-resistance of 26.5mΩ and a total gate charge of 63nC. It operates within a junction temperature range of -55°C to +175°C, offering a maximum power dissipation of 92W.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle electronics.
  • Advanced process technology enables ultra-low on-resistance per silicon area for improved efficiency.
  • Capable of handling repetitive avalanche energy up to the maximum junction temperature limit.

Single FETs, MOSFETs Applications

  • Automotive power switching circuits
  • High-efficiency motor drive systems
  • General-purpose power conversion applications

Single FETs, MOSFETs Procurement Notes

Verify that the specific order matches the required package variant (TO-220AB) and confirm the presence of the 'A' prefix indicating automotive grade status. Ensure compliance with RoHS directives and check for any specific supply chain notifications regarding component obsolescence or lifecycle changes before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust performance under automotive environmental conditions. The 175°C junction rating provides significant thermal headroom compared to standard industrial parts. Evaluate the 26.5mΩ maximum resistance against system conduction loss requirements and ensure the gate driver can supply sufficient charge to manage the 63nC gate capacitance effectively.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It represents the automotive-qualified version of the IRF540 series, distinguished by the leading 'AU' prefix. While sharing core electrical characteristics with its industrial counterparts, it undergoes stricter qualification protocols to meet automotive industry reliability standards.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements include the IRF540ZPBF for non-automotive contexts. For automotive applications, verify if other Infineon HEXFET devices with matching voltage and current ratings are available as alternatives.

Single FETs, MOSFETs FAQ

Is the AUIRF540Z suitable for use in unclamped inductive switching scenarios?

Yes, the datasheet specifies that repetitive avalanche operation is allowed up to the maximum junction temperature, provided the single pulse avalanche energy does not exceed the rated limits.

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is +175°C, allowing for operation in high-temperature environments typical of automotive under-hood applications.

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