AUIRF7675M2TR

$2.67

Description：MOSFET N-CH 150V 4.4A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:12ee3d90e74a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF7675M2TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 4.4A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF7675M2TR

Description：MOSFET N-CH 150V 4.4A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：56mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DirectFET™ Isometric M2
Package / Case：DirectFET™ Isometric M2

Single FETs, MOSFETs datasheet and documents for AUIRF7675M2TR

AUIRF7675M2TR

Single FETs, MOSFETs Overview

The AUIRF7675M2TR is an automotive-grade N-channel HEXFET power MOSFET in the DirectFET Isometric M2 package. It features a drain-source breakdown voltage of 150 V and a typical on-resistance of 47 mΩ (max 56 mΩ). The device supports a continuous drain current of 18 A at 25°C case temperature and handles pulsed currents up to 72 A. Key dynamic parameters include a total gate charge of 21 nC and an internal gate resistance of 1.2 Ω. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Optimized for Automotive Class D audio amplifier applications with low gate charge and reverse recovery characteristics.
DirectFET packaging enables dual-sided cooling and offers low parasitic inductance compared to conventional wire-bonded packages.
Internal gate resistance is optimized to improve efficiency, Total Harmonic Distortion (THD), and Electromagnetic Interference (EMI) performance.
Features repetitive avalanche capability to ensure robustness and reliability in automotive power systems.

Single FETs, MOSFETs Applications

Automotive Class D audio amplifier systems
High-efficiency power switching circuits requiring low EMI
Automotive power distribution modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TR indicates tape and reel packaging with a standard pack quantity of 4800 units. Confirm that the component meets AEC-Q101 qualification standards for automotive grade requirements. Ensure compatibility with vapor phase, infrared, or convection soldering processes as specified in application note AN-1035. Check for lead-free, RoHS, and halogen-free compliance status prior to integration.

Single FETs, MOSFETs Selection Notes

Select this component when designing automotive audio amplifiers requiring high efficiency and low distortion. The 150V rating provides sufficient headroom for 12V and 24V automotive electrical systems. The DirectFET M2 package is suitable for designs needing dual-sided thermal management to maximize heat transfer without external heatsinks in certain configurations.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family utilizing advanced silicon technology combined with the DirectFET platform. It is designed specifically to address the stringent performance requirements of modern automotive electronics, particularly where size, thermal performance, and electromagnetic compatibility are critical constraints.