AUIRF7769L2TR

Single FETs, MOSFETs Overview

The AUIRF7769L2TR is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies using silicon technology. It utilizes the DirectFET-L8 surface-mount package and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a drain-source breakdown voltage (Vds) of 100 V, a continuous drain current (Id) of 124 A, and a maximum on-resistance (Rds On) of 3.5 mOhms. The device operates with a gate-source voltage range of -20 V to +20 V and features a typical gate charge (Qg) of 200 nC. It supports a junction temperature range from -55°C to +175°C with a power dissipation rating of 125 W.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards for harsh environment operation
• DirectFET-L8 package design enabling high thermal efficiency and low inductance switching
• Enhanced N-channel silicon technology optimized for low conduction losses

Single FETs, MOSFETs Applications

• Automotive motor control systems
• High-side and low-side power switching applications
• DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix L2 against official Infineon documentation to confirm pinout and marking configurations. Ensure compliance with RoHS directives and check moisture sensitivity levels prior to soldering. Confirm that the DirectFET-L8 footprint matches the target PCB layout requirements exactly.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rated automotive MOSFET with high current handling capability is required. The 3.5 mOhm on-resistance suits applications prioritizing thermal management in compact form factors. Consider the 200 nC gate charge for driver compatibility in medium-frequency switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs designed for robust performance. The DirectFET packaging technology integrates the die directly onto the substrate to minimize parasitic inductance. It serves as an automotive-qualified alternative to non-automotive variants within the same voltage and current class.

Single FETs, MOSFETs Replacement Considerations

The IRF7769L1TRPBF is a related variant within the same series. Verify differences in on-resistance and threshold voltage specifications before substitution.