Single FETs, MOSFETs AUIRFB8405 product image

AUIRFB8405

  • Description:MOSFET N-CH 40V 120A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:2eb3bd6c2c27 Category: Brand:

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AUIRFB8405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 120A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFB8405

  • Description:MOSFET N-CH 40V 120A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:161 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5193 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):163W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRFB8405

AUIRFB8405

Single FETs, MOSFETs Overview

The AUIRFB8405 is an automotive-grade N-channel HEXFET power MOSFET in a TO-220AB package. It features a maximum drain-source voltage of 40 V and a typical on-resistance of 2.1 mΩ, with a maximum rating of 2.5 mΩ at 10 V gate drive. The device supports a continuous drain current of 120 A (package limited) or 185 A (silicon limited) at 25°C case temperature. It operates up to a junction temperature of 175°C and includes fast switching capabilities with a total gate charge of 107 nC.

Single FETs, MOSFETs Feature Summary

  • Advanced process technology achieving ultra-low on-resistance per silicon area
  • Designed for repetitive avalanche operation up to the maximum junction temperature
  • Fast switching speed combined with high reliability for automotive environments

Single FETs, MOSFETs Applications

  • Electric Power Steering (EPS)
  • Battery Switch
  • Start/Stop Micro Hybrid systems
  • Heavy Loads
  • DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon channels. Confirm that the part number prefix 'AU' aligns with specific automotive qualification requirements. Ensure thermal management designs account for the specified junction-to-case resistance. Validate compatibility with existing PCB layouts for the TO-220AB form factor before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical in 40 V automotive circuits. The TO-220AB package suits applications requiring robust mechanical mounting and efficient heat dissipation via heatsinks. Consider the 175°C operating limit for high-temperature environments where standard industrial parts may fail. Evaluate gate charge specifications against driver capabilities to optimize switching performance.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family from Infineon Technologies, specifically engineered for automotive markets. It utilizes advanced processing techniques to minimize resistance while maintaining high durability. The product line emphasizes efficiency and reliability in demanding electrical environments, adhering to strict automotive quality standards.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for direct cross-references. Verify pinout compatibility and thermal characteristics when substituting similar TO-220 packages. Ensure any alternative meets the same AEC-Q101 automotive qualification level.

AUIRFB8405AUIRFB8405

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