AUIRFL024N

Description：MOSFET N-CH 55V 2.8A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:d228c53fbc9c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFL024N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 2.8A SOT-223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFL024N

Description：MOSFET N-CH 55V 2.8A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：75mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for AUIRFL024N

AUIRFL024N

Single FETs, MOSFETs Overview

The AUIRFL024N is an automotive-grade HEXFET power MOSFET manufactured by Infineon Technologies. It features a single N-channel configuration housed in a SOT-223 surface-mount package. The device supports a maximum drain-source voltage of 55V and delivers a continuous drain current of 2.8A at 25°C, with a pulsed current capacity of 11.2A. It exhibits a maximum on-resistance of 75mΩ at VGS=10V. Key electrical parameters include a gate threshold voltage range of 2.0V to 4.0V, total gate charge of 18.3nC, and peak diode recovery dv/dt of 53V/ns. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Advanced planar technology enables low on-resistance per silicon area for high efficiency.
Fully avalanche rated with repetitive avalanche capability allowed up to the maximum junction temperature.
Features dynamic dV/dt rating to handle fast switching transitions effectively.
Automotive qualified according to AEC-Q101 standards for reliability.

Single FETs, MOSFETs Applications

Automotive electronic systems
Power management circuits
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify that the specific orderable part number matches the required packaging format, such as tube or tape and reel (AUIRFL024NTR). Confirm the presence of the 'A' suffix indicating automotive qualification and lead-free compliance. Ensure the procurement documentation references the correct datasheet version and confirms adherence to RoHS directives. Cross-check the manufacturer's date code against project timelines.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance with moderate current handling capabilities. The SOT-223 package is suitable for surface-mount assembly using standard vapor phase, infrared, or wave soldering techniques. Consider the thermal resistance characteristics and ensure adequate PCB copper area for heat dissipation to maintain operation within the specified temperature limits.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family from International Rectifier, now part of Infineon Technologies. It utilizes fifth-generation processing techniques designed to minimize on-resistance while maintaining ruggedized device design. The product line is specifically engineered to provide efficient and reliable solutions for demanding automotive environments alongside various other industrial applications.

Single FETs, MOSFETs Replacement Considerations

The base part number IRLFL024N shares identical electrical specifications but lacks the automotive qualification indicated by the 'AU' prefix. Verify if the specific application requires AEC-Q101 certification before substituting non-automotive variants.