AUIRFP4409

Description：MOSFET N-CH 300V 38A TO247AC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:60b14f9a7b7d Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AUIRFP4409 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 300V 38A TO247AC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFP4409

Description：MOSFET N-CH 300V 38A TO247AC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：69mOhm @ 24A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5168 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：341W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AUIRFP4409

AUIRFP4409

Single FETs, MOSFETs Overview

The AUIRFP4409 is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a TO-247AC through-hole package and supports junction temperatures up to 175°C. Key electrical parameters include a drain-source breakdown voltage of 300V, a continuous drain current of 38A at 25°C case temperature, and a maximum on-resistance of 69mΩ at VGS=10V. The device exhibits fast switching characteristics with a typical total gate charge of 83nC and supports repetitive avalanche energy up to the maximum junction temperature.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Advanced process technology for low on-resistance
Fast switching speed capability
Repetitive avalanche allowed up to Tjmax

Single FETs, MOSFETs Applications

Automotive power management systems
High-efficiency motor control circuits
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's lot code and date code markings against official Infineon documentation. Confirm that the specific orderable part number matches the required TO-247AC package form factor. Ensure compliance with RoHS directives as indicated in the qualification information. Cross-reference the datasheet revision history to validate parameter consistency before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive reliability and high voltage handling capabilities. The TO-247AC package facilitates efficient thermal dissipation for high-power applications. Evaluate the 69mΩ maximum on-resistance against system efficiency targets. Consider the 300V breakdown voltage margin relative to the operating supply voltage to ensure safe operation under transient conditions.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area while maintaining ruggedized device design. The product line is specifically engineered to provide efficient and reliable performance for automotive and industrial applications requiring high current switching.