AUIRFR2307Z

Single FETs, MOSFETs Overview

The AUIRFR2307Z is an automotive-qualified, single N-channel HEXFET power MOSFET in a D-Pak (TO-252AA) package. It features a 75V drain-source breakdown voltage and a maximum on-resistance of 16mΩ at VGS=10V. The device supports continuous drain currents up to 53A (silicon limited) or 42A (package limited). Key electrical parameters include a total gate charge of 50nC, a threshold voltage range of 2V to 4V, and a junction-to-case thermal resistance of 1.42°C/W. It operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for reliability.
• Advanced process technology enabling ultra-low on-resistance per silicon area.
• Capable of handling repetitive avalanche energy up to the maximum junction temperature.
• Designed for fast switching speeds to improve efficiency in power applications.

Single FETs, MOSFETs Applications

• Automotive power switching circuits
• Motor control systems
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your production needs. The standard tube packaging corresponds to part number AUIRFR2307Z, while tape and reel options are available under AUIRFR2307ZTRL. Confirm moisture sensitivity level and lead-free status during sourcing to ensure compliance with assembly requirements.

Single FETs, MOSFETs Selection Notes

Select this component when automotive-grade reliability is mandatory alongside low conduction losses. The 75V rating suits 12V and 24V automotive systems. Evaluate the 16mΩ RDS(on) against thermal constraints, as the D-Pak package limits continuous current to 42A based on thermal dissipation rather than silicon capability.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, utilizing planar strip technology. The 'AU' prefix indicates automotive qualification. It serves as a robust solution for high-current switching where size and thermal performance are critical constraints in compact electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and absolute maximum ratings before substituting. Verify that alternative components meet the same AEC-Q101 automotive qualification standards if used in certified vehicle systems.

Single FETs, MOSFETs FAQ

Is the AUIRFR2307Z suitable for repetitive avalanche operation?

Yes, the datasheet specifies that repetitive avalanche is allowed up to the maximum junction temperature (Tjmax).

What is the difference between the silicon-limited and package-limited drain current?

The silicon-limited current is 53A, representing the theoretical limit of the die. The package-limited current is 42A, which is the practical limit determined by the thermal capabilities of the D-Pak package.