AUIRFR2905Z

Single FETs, MOSFETs Overview

The AUIRFR2905Z is an N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage (Vds) of 55 V and a continuous drain current (Id) of 42 A at the package limit, with silicon limitations allowing up to 59 A. The device exhibits a typical on-resistance (Rds(on)) of 11.1 mΩ and a maximum of 14.5 mΩ at Vgs = 10 V. Key electrical parameters include a total gate charge (Qg) of 29 nC, a threshold voltage range of 2.0 V to 4.0 V, and a single pulse avalanche energy rating of 82 mJ. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified according to AEC-Q101 standards for high reliability in vehicle electronics.
• Advanced process technology enables extremely low on-resistance per silicon area.
• Supports repetitive avalanche operation up to the maximum junction temperature.
• Designed for fast switching speeds to improve efficiency in power conversion applications.

Single FETs, MOSFETs Applications

• Automotive power management systems
• Motor control circuits
• High-efficiency DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing needs, as the base part number is available in tube packaging or tape and reel formats. Confirm that the component meets the necessary automotive qualification standards for your target application environment. Ensure compatibility with your assembly processes regarding the D-Pak package and soldering temperatures.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust performance under automotive conditions. The device offers a balance of low conduction losses due to its low Rds(on) and reliable switching characteristics. Consider the thermal resistance values when planning heat dissipation strategies, especially given the high current capabilities and operating temperature limits.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon-based enhancement mode technology housed in a D-Pak (TO-252AA) surface-mount package. The product line is engineered to provide high current density and improved ruggedness compared to standard industrial counterparts.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 55V voltage rating, N-channel configuration, and D-Pak footprint. Verify that alternative devices meet or exceed the 11.1 mΩ on-resistance and support the required 175°C operating temperature. Automotive-grade equivalents should be checked against AEC-Q101 compliance if used in vehicle systems.

Single FETs, MOSFETs FAQ

Is the AUIRFR2905Z suitable for repetitive avalanche applications?

Yes, the datasheet explicitly states that repetitive avalanche operation is allowed up to the maximum junction temperature (Tjmax).

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current (IDM) is rated at 240 A, limited by the pulse width and maximum junction temperature.

Does this MOSFET require a specific gate voltage for full conduction?

The static drain-to-source on-resistance is specified at a gate-to-source voltage (Vgs) of 10 V.