Single FETs, MOSFETs AUIRFR9024NTRL product image

AUIRFR9024NTRL

$1.60
  • Description:MOSFET P-CH 55V 11A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:1918b24d67a1 Category: Brand:

  
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AUIRFR9024NTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 55V 11A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR9024NTRL

  • Description:MOSFET P-CH 55V 11A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:175mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):38W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR9024NTRL

AUIRFR9024NTRL

Single FETs, MOSFETs Overview

The AUIRFR9024NTRL is an automotive-grade, single P-channel enhancement-mode MOSFET from the HEXFET family. It features a maximum drain-source voltage of 55 V and a continuous drain current of 11 A at 25°C. The device exhibits a maximum on-resistance of 175 mΩ and a typical gate charge of 19 nC at 10 V. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 38 W. Packaged in DPAK (TO-252AA), it includes an integrated body diode.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability compliant with AEC-Q101 standards for high-temperature operation.
  • Integrated body diode optimized for synchronous rectification applications.
  • Enhanced avalanche ruggedness rated for handling transient energy stresses.

Single FETs, MOSFETs Applications

  • Automotive load switching circuits
  • Synchronous rectification in DC-DC converters
  • High-side power management modules

Single FETs, MOSFETs Procurement Notes

Verify that the specific part number suffix corresponds to the required automotive qualification level. Confirm package marking and datasheet revision match the design requirements. Ensure component authenticity through authorized distribution channels to guarantee compliance with automotive safety standards.

Single FETs, MOSFETs Selection Notes

Select this component when automotive certification is mandatory for P-channel switching applications. Evaluate thermal performance against the 175 mΩ on-resistance to ensure junction temperatures remain within limits during continuous conduction. Consider the 19 nC gate charge for driver capability requirements.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET Power MOSFET portfolio, specifically tailored for automotive environments. It utilizes silicon technology to provide robust switching capabilities. The DPAK package facilitates surface-mount assembly while providing adequate thermal dissipation for moderate power levels.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IRFR9024NTRPBF or IRFR9024NPBF. Verify that alternative parts meet the same automotive qualification standards if the application requires AEC-Q101 compliance. Check pinout compatibility and thermal resistance specifications before implementation.

AUIRFR9024NTRLAUIRFR9024NTRL
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