AUIRFS3306

Single FETs, MOSFETs Overview

The AUIRFS3306 is a single N-channel HEXFET power MOSFET designed for automotive applications. It features a D2-Pak (TO-263AB) package and supports junction temperatures up to 175°C. Key electrical parameters include a drain-to-source breakdown voltage of 60V, a maximum on-resistance of 4.2mΩ at VGS=10V, and a continuous drain current of 160A (silicon limited) or 120A (package limited). The device offers fast switching capabilities with a typical total gate charge of 85nC and allows repetitive avalanche operation up to Tjmax.

Single FETs, MOSFETs Feature Summary

• Automotive qualified according to AEC-Q101 standards
• Advanced process technology enabling ultra-low on-resistance per silicon area
• Capable of operating at junction temperatures up to 175°C
• Supports repetitive avalanche energy ratings up to the maximum junction temperature

Single FETs, MOSFETs Applications

• Automotive power management systems
• High-efficiency motor control circuits
• DC-DC converter topologies requiring low conduction losses

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing needs. The standard tube version is AUIRFS3306, while the tape and reel left variant is designated as AUIRFS3306TRL. Confirm package availability and ensure compliance with RoHS directives during procurement planning.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring high thermal stability and robust avalanche performance. The D2-Pak package provides a balance between current handling capacity and PCB mounting constraints. Ensure gate drive voltages remain within the specified limits to maintain optimal switching characteristics and prevent device degradation.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically tailored for automotive-grade reliability. It utilizes advanced processing techniques to minimize on-resistance while maintaining high surge current capabilities. The device is suitable for applications demanding efficient power switching under harsh thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 60V rating, D2-Pak package, and automotive qualification. Verify that substitute parts meet the same RDS(on) maximums and thermal resistance specifications to ensure circuit compatibility without redesigning the thermal management system.

Single FETs, MOSFETs FAQ

Is the AUIRFS3306 suitable for repetitive avalanche operations?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature (Tjmax).

What is the difference between the AUIRFS3306 and AUIRFS3306TRL?

The primary difference is the packaging format. AUIRFS3306 comes in a standard tube, while AUIRFS3306TRL is supplied in tape and reel left form for automated assembly.