AUIRFS3607

Single FETs, MOSFETs Overview

The AUIRFS3607 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 75V drain-source breakdown voltage and a maximum continuous drain current of 80A at 25°C case temperature. The device exhibits a typical on-resistance of 7.34mΩ, with a maximum rating of 9.0mΩ at VGS=10V and ID=46A. It supports a junction operating temperature range from -55°C to +175°C and offers a single pulse avalanche energy capability of 120mJ.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle applications
• Advanced process technology enabling extremely low on-resistance per silicon area
• Enhanced repetitive avalanche ruggedness allowing operation up to the maximum junction temperature
• Fast switching characteristics combined with improved dynamic dv/dt performance

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High efficiency synchronous rectification in switch-mode power supplies
• Uninterruptible power supply circuits
• Hard switched and high frequency power switching applications

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required package form, such as Tube or Tape and Reel, as availability varies by configuration. Confirm compliance with RoHS directives and ensure the component meets the necessary AEC-Q101 qualification level for the intended automotive environment before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance with low conduction losses. Ensure the thermal management design accommodates the specified junction-to-case thermal resistance. Verify that gate drive voltages remain within the ±20V limit and that peak currents do not exceed the pulsed drain current ratings under all operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs designed by Infineon Technologies. It utilizes advanced processing techniques to achieve superior electrical performance compared to standard industrial counterparts. The automotive qualification ensures suitability for demanding environments where long-term reliability and thermal stability are critical requirements.

Single FETs, MOSFETs Replacement Considerations

The IRFS3607PBF serves as a non-automotive equivalent offering similar electrical parameters but lacks the specific automotive qualification certification.